Microstructures formed in recrystallized Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1758293
Reference18 articles.
1. Characterization of Si‐implanted and electron‐beam‐annealed silicon‐on‐sapphire using high‐resolution electron microscopy
2. The electronic structure at the atomic scale of ultrathin gate oxides
3. Atomic level characterization of ultrathin flat cobalt disilicide film with three crystalline domains
4. Comparative study of annealed neon‐, argon‐, and krypton‐ion implantation damage in silicon
5. A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafers
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1. Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method;Journal of Applied Physics;2012-08-15
2. Epitaxy-like orientation of nanoscale Ag islands grown on air-oxidized Si(110)-(5 × 1) surfaces;Surface and Interface Analysis;2011-11-08
3. Subsurface sliding wear damage characterization in Al–Si alloys using focused ion beam and cross-sectional TEM techniques;Wear;2011-01
4. Shape effect of microtwins on high-resolution transmission electron microscope images;physica status solidi (a);2008-05-26
5. MeV heavy ion beam induced epitaxial crystallization of buried Si3N4 layer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03
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