Controlling a three dimensional electron slab of graded AlxGa1−xN
Author:
Affiliation:
1. Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
2. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warszawa, Poland
Funder
North Atlantic Treaty Organization (NATO)
European Research Council (ERC)
Austrian Science Fund (FWF)
Seventh Framework Programme (FP7)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939788
Reference43 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. InGaN/AlGaN blue‐light‐emitting diodes
3. AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
4. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
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