Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357244
Reference16 articles.
1. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
2. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
3. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
4. The n-channel SiGe/Si modulation-doped field-effect transistor
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2. Electron Mobility Model of Strained Si1-xGex(001);Solid State Phenomena;2011-11
3. Estimation of hole mobility in strained Si1−xGex buried channel heterostructure PMOSFET;Solid-State Electronics;2001-05
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