Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369289
Reference19 articles.
1. The effects of oxygen and defects on the deep‐level properties of Er in crystalline Si
2. Erbium implanted thin film photonic materials
3. Luminescence from Erbium‐Doped Silicon Epi Layers Grown by Liquid‐Phase Epitaxy
4. Deep levels in Er-doped liquid phase epitaxy grown silicon
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1. Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires;Scientific Reports;2014-01-08
2. Silicon-Based Light Sources;Handbook of Silicon Photonics;2013-04-09
3. The range distribution and annealing behavior of Er ions implanted in silicon-on-insulator;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-03
4. Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-05
5. Photonic Properties of Er-Doped Crystalline Silicon;Proceedings of the IEEE;2009-07
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