Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99178
Reference6 articles.
1. Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's
2. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
3. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
4. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
5. Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature
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1. Optics and Photonics: Key Enabling Technologies;Proceedings of the IEEE;2012-05
2. Strained interface of lattice-mismatched wafer fusion;Physical Review B;1997-05-15
3. LATTICE-MISMATCHED HETEROEPITAXY;Integrated Optoelectronics;1995
4. Gallium arsenide and other compound semiconductors on silicon;Journal of Applied Physics;1990-10
5. Room‐temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor‐phase epitaxy;Journal of Applied Physics;1990-08-15
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