Ultraviolet photon‐assisted heteroepitaxy of CdTe and Hg1−xCdxTe on GaAs/Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343847
Reference9 articles.
1. Ultraviolet assisted growth of II–VI compounds
2. A HgCdTe/CdTe/GaAs/Si Epitaxial Structure
3. A HgCdTe/CdTe/GaAs/Si Epitaxial Structure
4. The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates
5. Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates
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1. Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates;Journal of Electronic Materials;1996-08
2. MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs;Journal of Electronic Materials;1993-08
3. Composition control in Hg1−xCdxTe growth by photoassisted MOCVD using an excimer laser;Journal of Crystal Growth;1992-02
4. Selected Area Processing;Thin Film Processes;1991
5. Photochemical Vapor Deposition;Thin Film Processes;1991
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