First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements-Reference-Cited by-同舟云学术

First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements

Published:2018-03 Issue:3 Volume:8 Page:035106
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Yubo¹,Wang Pengtao¹^ORCID,Hua Fei¹,Zhan Shijie¹^ORCID,Wang Xiaozhi¹,Luo Jikui¹^ORCID,Yang Hangsheng²^ORCID

Affiliation:

1. Key Laboratory of Micro-Nano Electronic Device and Smart System of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China

2. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Funder

fundamental research funds for central universites

Zhejiang Science and technology plan

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5019955

Reference36 articles.

1. Review of advances in cubic boron nitride film synthesis

2. Vapour phase deposition of cubic boron nitride

3. Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

4. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

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