Valence-band structure of self-assembled InAs quantum dots studied by capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1564288
Reference18 articles.
1. Theory of photoluminescence from modulation-doped self-assembled quantum dots in a magnetic field
2. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
3. Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
4. Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
5. Electron-hole alignment in InAs/GaAs self-assembled quantum dots: Effects of chemical composition and dot shape
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1. Epitaxial Quantum Dot Infrared Photodetectors;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-09-15
2. Measurement Methods;Self-Organized Quantum Dots for Memories;2013-10-01
3. Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum dots;Physical Review B;2012-05-04
4. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy;Applied Physics Letters;2010-01-18
5. Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation;Journal of Materials Research;2009-07
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