Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347100
Reference19 articles.
1. 680‐nm band GaInP/AlGaInP tapered stripe laser
2. High‐power (1.4 W) AlGaInP graded‐index separate confinement heterostructure visible (λ∼658 nm) laser
3. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
4. Defects in epitaxial multilayers
5. Strained‐layer superlattices from lattice mismatched materials
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