Imaging in-plane 90° magnetization switching in a (Ga,Mn)As epitaxial layer-Reference-Cited by-同舟云学术

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Imaging in-plane 90° magnetization switching in a (Ga,Mn)As epitaxial layer

Published:2018-08-14 Issue:6 Volume:124 Page:063901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Al-Qadi B.¹^ORCID,Sakatoku Y.²^ORCID,Nishizawa N.²^ORCID,Munekata H.²^ORCID

Affiliation:

1. Department of Electrical Engineering, College of Engineering and Technology, Palestine Technical University — Kadoorie, P.O. Box: 7, Yafa Street, Tulkarm, Palestine

2. Laboratory for Future Interdisciplinary Research Science and Technology, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040129

Reference34 articles.

1. F. Matsukura , H. Ohno , and T. Dietl , inHandbook of Magnetic Materials, edited by K. H. J. Buschow ( Elsevier Science, 2002), Vol.14, pp. 1–88.

2. H. Munekata , inConcepts in Spin Electronics, edited by S. Maekawa ( Oxford Science Publications, 2006), pp. 1– 42.

3. Theory of ferromagnetic (III,Mn)V semiconductors

4. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

5. Effect of Optical Spin Injection on Ferromagnetically Coupled Mn Spins in the III-V Magnetic Alloy Semiconductor(Ga,Mn)As

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