Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110723
Reference9 articles.
1. A 0,25μm NMOS transistor fabricated with X-ray lithography
2. Synchrotron radiation x-ray lithography fabrication of 0.35 μm gate-length n-type metal–oxide–semiconductor transistors
3. Radiation effects in MOS devices caused by x‐ray and e‐beam lithography
4. Radiation-Induced Interface-State Generation in MOS Devices
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