Structure of dislocations in germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662940
Reference12 articles.
1. Velocity Measurements on Screw- and 60°-Dislocations in Germanium
2. Observations on dislocation nodes in silicon
3. The dissociation of dislocations in silicon
4. The resolution of lattice planes and lattice defects in semiconductors including observations on boundaries
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High resolution electron microscopic investigations of dislocations in deformed GaAs single crystals doped with Te;Physica Status Solidi (a);1984-07-16
2. HVEM Structure Images of Extended 60° - and Screw Dislocations in Silicon;Japanese Journal of Applied Physics;1980-03
3. The Electronic Structure of Grain Boundaries in Polycrystalline Semiconductor Thin Films;Polycrystalline and Amorphous Thin Films and Devices;1980
4. The low-angle [011] tilt boundary in germanium II. Theoretical analysis of observed configurations and stability;Philosophical Magazine A;1979-04
5. The low-angle [011] tilt boundary in germanium I. High-resolution structure determination;Philosophical Magazine A;1979-04
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