Intra- and inter-conduction band optical absorption processes in β-Ga2O3-Reference-Cited by-同舟云学术

Intra- and inter-conduction band optical absorption processes in β-Ga2O3

Published:2020-08-17 Issue:7 Volume:117 Page:072103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Singh Arjan¹^ORCID,Koksal Okan¹^ORCID,Tanen Nicholas²,McCandless Jonathan¹,Jena Debdeep¹²,Xing Huili (Grace)¹²^ORCID,Peelaers Hartwin³^ORCID,Rana Farhan¹

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca NY 14853, USA

2. Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853, USA

3. Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0016341

Reference32 articles.

1. Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3

4. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

5. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

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