Interfacial perpendicular magnetic anisotropy and electric field effect in Ta/CoFeB/Mg1−xTixO heterostructures
Author:
Affiliation:
1. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan
2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4999224
Reference34 articles.
1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
2. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
5. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
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