Encapsulated gate-all-around InAs nanowire field-effect transistors-Reference-Cited by-同舟云学术

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Encapsulated gate-all-around InAs nanowire field-effect transistors

Published:2013-11-18 Issue:21 Volume:103 Page:213502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sasaki Satoshi,Tateno Kouta,Zhang Guoqiang,Suominen Henri,Harada Yuichi,Saito Shiro,Fujiwara Akira,Sogawa Tetsuomi,Muraki Koji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4832058

Reference28 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Nanowire-based one-dimensional electronics

3. Nanowire Transistor Performance Limits and Applications

4. III-V Nanowires—Extending a Narrowing Road

5. Vertical high-mobility wrap-gated InAs nanowire transistor

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1. Effect of bending deformation on suspended topological insulator nanowires: Towards a topological insulator based NEM switch;Sensors and Actuators A: Physical;2024-06

2. Electron transport in quantum channels with spin–orbit interaction: effects of the sign of the Rashba coupling and applications to nanowires;New Journal of Physics;2022-09-01

3. The Dirac paradox in 1 + 1 dimensions and its realization with spin–orbit coupled nanowires;New Journal of Physics;2022-05-01

4. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y₂O₃;Nanoscale;2022

5. Electrical tuning of the spin–orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition;Applied Physics Letters;2021-07-05

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