Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1856689
Reference19 articles.
1. Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems
2. Fundamentals of Microfabrication
3. Fatigue of Materials
4. Slow Crack Growth in Single-Crystal Silicon
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