Affiliation:
1. Engineering Department, Cambridge University 1 , Cambridge CB3 0FA, United Kingdom
2. School of Electrical Engineering and Automation, Wuhan University 2 , Wuhan 430072, China
Abstract
Electronic devices would benefit from a low-cost amorphous, dopable, bipolar oxide semiconductor. However, p-type oxides are quite rare, largely due to self-compensation by native defects. Our simulations find that the amorphous phase of TeO2 is chemically ordered, forms shallow, uncompensated acceptor substitutional AsTe and NO centers, and uses materials that are processable at low temperatures.