Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched (Ba0.65,Sr0.35)TiO3 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2402100
Reference20 articles.
1. Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's
2. Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits
3. Temperature dependence of the Raman spectra of polycrystallineBa1−xSixTiO3
4. Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma
5. Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma
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