High electron mobility in epitaxial SnO2−x in semiconducting regime
Author:
Affiliation:
1. Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747, South Korea
Funder
Samsung
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/3/7/1.4927470.pdf?itemId=/content/aip/journal/aplmater/3/7/10.1063/1.4927470&mimeType=pdf&containerItemId=content/aip/journal/aplmater
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5. Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity
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