Structure and intermixing of GaSb∕GaAs quantum dots-Reference-Cited by-同舟云学术

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Structure and intermixing of GaSb∕GaAs quantum dots

Published:2004-12-13 Issue:24 Volume:85 Page:5890-5892
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Timm R.,Eisele H.,Lenz A.,Becker S. K.,Grabowski J.,Kim T.-Y.,Müller-Kirsch L.,Pötschke K.,Pohl U. W.,Bimberg D.,Dähne M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1833560

Reference17 articles.

1. 450 meV hole localization in GaSb/GaAs quantum dots

2. Radiative recombination in type‐II GaSb/GaAs quantum dots

3. Local conduction band offset of GaSb self-assembled quantum dots on GaAs

4. Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

5. Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy

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