Identification of localized radiation damage in power MOSFETs using EBIC imaging
Author:
Affiliation:
1. Sandia National Laboratories, Livermore, California 94550, USA
2. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Funder
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0053892
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3. F. Faccio , B. Allongue , G. Blanchot , C. Fuentes , S. Michelis , S. Orlandi , and R. Sorge , in European Conference on Radiation and Its Effects on Components and Systems ( IEEE, Brugge, 2009), pp. 46–53.
4. Radiation Effects in MOS Oxides
5. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
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