Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)2]4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2405848
Reference18 articles.
1. High Dielectric Constant of RF-Sputtered HfO2Thin Films
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3. High-κ gate dielectrics: Current status and materials properties considerations
4. Defect energy levels in HfO2 high-dielectric-constant gate oxide
5. Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
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