Interaction of micropipes with foreign polytype inclusions in SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2359686
Reference35 articles.
1. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
2. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
3. Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation
4. Growth and Defect Reduction of Bulk SiC Crystals
5. Defect characterization of 4H-SiC wafers for power electronic device applications
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1. Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers;ACS Applied Electronic Materials;2024-09-12
2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
3. Prismatic dislocation loops in crystalline materials with empty and coated channels;European Journal of Mechanics - A/Solids;2022-07
4. Color Spectroscopy for Energy-Level Analysis of Single-Crystal Silicon Carbide;Crystal Growth & Design;2022-03-15
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