Low‐temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma-Reference-Cited by-同舟云学术

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Low‐temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma

Published:1995-12-04 Issue:23 Volume:67 Page:3500-3502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Martinet C.,Devine R. A. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115260

Reference12 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic and electrical characterization of oxygen microwave discharge used for downstream plasma oxidation of Si;Surface and Interface Analysis;2022-08-24

2. Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma;Applied Physics Letters;2007-02-26

3. Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO 2 by In-Situ Fabrication Technique;Chinese Physics Letters;2005-02-24

4. Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs;IEEE Electron Device Letters;2002-06

5. Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates;Japanese Journal of Applied Physics;2000-04-15

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