Efficient silicon solar cells with highly conductive zirconium nitride electron-selective contacts

Author:

Tian Juan1ORCID,Xu Kai2ORCID,Wang Guangwei1,Jiang Hongxu1,Liu Yuan34,Zhu Peng3,Wang Deliang15ORCID

Affiliation:

1. Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China 1 , Hefei, Anhui 230026, People's Republic of China

2. Nano Science and Technology Institute, University of Science and Technology of China 2 , Suzhou, Jiangsu 215123, People's Republic of China

3. College of Chemistry and Chemical Engineering, Nantong University 3 , Nantong, Jiangsu 226019, People's Republic of China

4. Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University 4 , Changzhou, Jiangsu 213164, China

5. Key Laboratory of Materials for Energy Conversion, Chinese Academy of Sciences, University of Science and Technology of China 5   , Hefei, Anhui 230026, People's Republic of China

Abstract

Efficient carrier transport and suppressed interface recombination at back contact are essential for high-efficiency solar cells. Herein, we developed a zirconium nitride (ZrN) film with a low film resistivity of 1.6 × 10−4 Ω cm as an electron-selective contact for n-type silicon solar cells. Suitable band alignment of the n-Si/ZrN hetero-contact eliminates the interface barrier between Al and n-Si. Meanwhile, electrostatic potential induced by interfacial Si–O–Zr bonds assists electron extraction. The fill factor of devices has been significantly improved by incorporating a ZrN layer. After optimizing the thickness of ZrN and contact fraction, the champion ZrN-based device exhibited an efficiency of 19.7%, yielding a 23% enhancement compared with that without a ZrN interlayer.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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