A scanning nonlinear dielectric microscopic investigation of potential-induced degradation in monocrystalline silicon solar cells
Author:
Affiliation:
1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
2. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Funder
Japan Society for the Promotion of Science
New Energy and Industrial Technology Development Organization
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0004091
Reference12 articles.
1. Origin of Na causing potential-induced degradation for p-type crystalline Si photovoltaic modules
2. J. Berghold , O. Frank , H. Hoehne , S. Pingel , B. Richardson , and M. Winkler , in Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain (2010), p. 3753.
3. P. Hacke , M. Kempe , K. Terwilliger , S. Glick , N. Call , S. Johnston , S. Kurtz , I. Bennett , and M. Kloos , in Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain (2010), p. 3760.
4. Potential-induced degradation in photovoltaic modules: a critical review
5. Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy;2022 IEEE 49th Photovoltaics Specialists Conference (PVSC);2022-06-05
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