Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1494103
Reference17 articles.
1. Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−xGexalloys
2. Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors
3. Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs. II. Co silicide
4. Preferential Co–Si bonding at the Co/SiGe(100) interface
5. Germanium segregation in the Co/SiGe/Si(001) thin film system
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1. Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate;Materials Chemistry and Physics;2011-10
2. Interfacial effects on the magnetic profiles and interlayer exchange coupling of Co/CoSi multilayers;Thin Solid Films;2011-10
3. Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer;Thin Solid Films;2010-10
4. Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer;Applied Physics Letters;2008-05-05
5. The role of material microstructure in the magnetic behavior of amorphous and polycrystalline CoxSi1-x lines;The European Physical Journal B;2005-10
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