Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics-Reference-Cited by-同舟云学术

Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics

Published:2009-03-02 Issue:9 Volume:94 Page:093505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Han,Zhu Feng,Chen Yen-Ting,Yum Jung Hwan,Wang Yanzhen,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3093442

Reference14 articles.

1. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

2. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

3. High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

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