Annealing-insensitive “black silicon” with high infrared absorption-Reference-Cited by-同舟云学术

Annealing-insensitive “black silicon” with high infrared absorption

Published:2014-08-21 Issue:7 Volume:116 Page:073102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peng Yan¹²,Chen Xiangqian¹,Zhou Yunyan¹,Xu Gongjie¹,Cai Bin¹,Zhu Yiming¹,Xu Jian³,Henderson Ron⁴,Dai Jianming²

Affiliation:

1. Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093, China

2. The Institute of Optics, University of Rochester, Rochester, New York 14627, USA

3. Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

4. Department of Physics & Astronomy, Middle Tennessee State University, Murfreesboro, Tennessee 37132, USA

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893584

Reference25 articles.

1. Microstructuring of silicon with femtosecond laser pulses

2. Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses

3. An alternative approach for femtosecond laser induced black silicon in ambient air

4. Deactivation of metastable single-crystal silicon hyperdoped with sulfur

5. On the optical and morphological properties of microstructured Black Silicon obtained by cryogenic-enhanced plasma reactive ion etching

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetection and Surface Enhanced Raman Scattering Properties of Femtosecond Laser Processed Si Decorated with AU Nanoparticles;2024

2. Au decorated direct laser processed black Si for enhanced infrared absorption;Eighteenth National Conference on Laser Technology and Optoelectronics;2023-10-16

3. Broadband MSM photodetector based on S-doped black silicon fabricated by femtosecond laser;Applied Surface Science;2023-05

4. Photoelectric characteristics of different micro structures of black silicon etched by femtosecond laser;Ninth Symposium on Novel Photoelectronic Detection Technology and Applications;2023-04-04

5. Sub-bandgap photo-response of Mo-hyperdoped black silicon MSM photodetectors;Optical and Quantum Electronics;2023-01-09