Epitaxially regrown quantum dot photonic crystal surface emitting lasers-Reference-Cited by-同舟云学术

Epitaxially regrown quantum dot photonic crystal surface emitting lasers

Published:2024-05-27 Issue:22 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Kyaw Aye S. M.¹^ORCID,King Ben C.¹^ORCID,McKenzie Adam F.¹^ORCID,Bian Zijun¹^ORCID,Kim Daehyun¹,Gerrard Neil D.²,Nishi Kenichi³^ORCID,Takemasa Keizo³,Sugawara Mitsuru³,Childs David T. D.⁴,Hill Calum H.⁴^ORCID,Taylor Richard J. E.⁴^ORCID,Hogg Richard A.¹⁵^ORCID

Affiliation:

1. James Watt School of Engineering, University of Glasgow 1 , Glasgow G12 8QQ, United Kingdom

2. III-V Epi Ltd., 11 The Square 2 , University Avenue, Glasgow G12 8QQ, United Kingdom

3. QD Laser Inc 3 ., Minamiwataridacho, Kawaski-ku, Kawasaki, Kanagawa 210-0855, Japan

4. Vector Photonics Ltd 4 ., 2317 Maryhill Rd., Glasgow G20 0SP, United Kingdom

5. Aston Institute of Photonic Technologies, Aston University 5 , Birmingham B4 7ET, United Kingdom

Abstract

Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively.

Funder

Innovate UK

Engineering and Physical Sciences Research Council

Royal Commission for the Exhibition of 1851

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0202834/19967637/221101_1_5.0202834.pdf

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