Depth profiling of the Ge concentration in SiGe alloys usinginsituellipsometry during reactive‐ion etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353916
Reference17 articles.
1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. Electroreflectance in GeSi alloys under hydrostatic pressure
3. Optical spectra of SixGe1−xalloys
4. Intrinsic Optical Absorption in Germanium-Silicon Alloys
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