Effects of annealing on profiles of aluminum implanted in silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321720
Reference12 articles.
1. Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de Graaff
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3. Impurity Depth Profiles by Microanalysis Techniques
4. Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide
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2. Spatially Resolved Diffusion of Aluminum in 4H-SiC During Postimplantation Annealing;IEEE Transactions on Electron Devices;2020-10
3. Diffusion Al from implanted SiC layer;Physica B: Condensed Matter;2009-12
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