Theoretical study of strained InGaP quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114035
Reference17 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells;Applied Physics Letters;2004-02-02
2. The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE;Journal of Alloys and Compounds;1998-10
3. Analysis of coupling effect on valence band structures of strained multiple quantum wells;Optical and Quantum Electronics;1997
4. Optical gain of InGaP and cubic GaN quantum‐well lasers with very strong spin–orbit coupling;Journal of Applied Physics;1996-05-15
5. Theory of optical gain in strained‐layer quantum wells within the 6×6 Luttinger–Kohn model;Journal of Applied Physics;1995-08-15
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