Forward bias voltage controlled infrared photodetection and electroluminescence from ap-i-nquantum dot structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607308
Reference10 articles.
1. Infrared Detectors
2. Fundamental physics of infrared detector materials
3. Quantum‐well infrared photodetectors
4. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature
5. Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
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1. Self-intermetallic α-Mn a spin glass by Fe and Al doping: transport study of the α-Mn structure type alloys;Materials Research Express;2019-11-01
2. Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers;Optical and Quantum Electronics;2016-01-18
3. Charge character in the double‐barrier quantum dots in well hybrid structure;Micro & Nano Letters;2015-10
4. 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier;IEEE Electron Device Letters;2013-06
5. Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity;Applied Physics Letters;2012-04-23
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