Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory-Reference-Cited by-同舟云学术

Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory

Published:2019-03-18 Issue:11 Volume:114 Page:112102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hang Cheng-Zhou¹,Wang Chen¹,Gao Bin²,Chen Huan¹,Xu Ming-Hong¹,Hao Liang³,Lu Hong-Liang⁴^ORCID

Affiliation:

1. School of Microelectronics, Dalian University of Technology, Dalian 116024, China

2. Institute of Microelectronics, Tsinghua University, Beijing 100084, China

3. Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China

4. State Key Laboratory of ASIC and Systems, Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China

Funder

Fundamental Research Funds for the Central University of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5078782

Reference23 articles.

1. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

2. Energy‐Efficient Hybrid Perovskite Memristors and Synaptic Devices

3. Face classification using electronic synapses

4. A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

5. Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

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