Observation of inductively coupled-plasma-induced damage onn-type GaN using deep-level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1557316
Reference11 articles.
1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
2. Cl[sub 2] reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
3. Plasma etch-induced conduction changes in gallium nitride
4. Depth and thermal stability of dry etch damage in GaN Schottky diodes
5. Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy
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