Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1928309
Reference19 articles.
1. High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
2. Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers
3. Transition of a noncavity bistable exciton system driven by correlated external noise to a strongly absorbing state
4. Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation
5. Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity
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