Growth of tapered silica nanowires with a shallow U-shaped vapor chamber: Growth mechanism and structural and optical properties
Author:
Affiliation:
1. Department of Physics, Sichuan University, Chengdu 610064, China
2. Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
Funder
National Natural Science Foundation of China (NSFC)
Program for New Century Excellent Talents in University (Program for New Century Excellent Talents)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4918718
Reference55 articles.
1. Editorial for nanoscale themed issue “Recent Advance in Semiconductor Nanowire Research”
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