Change in density of states in a resonant tunneling structure due to a scattering center in the well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346966
Reference24 articles.
1. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
2. Band structure of impurity‐sheet‐doped superlattice alloys
3. Band structure of impurity‐sheet‐doped superlattice alloys
4. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
5. Tunneling in a finite superlattice
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Localized electronic states of a terminated superlattice with a δ defect in the subsurface region;Physical Review B;1999-02-15
2. Effects of the δ-Doping Position in the Well on Resonant Tunneling in Double-Barrier Structures;physica status solidi (b);1995-10-01
3. Effects of an impurity sheet in the well on resonant tunneling in double‐barrier structures;Journal of Applied Physics;1995-05-15
4. Effects of Scattering on Resonant Tunneling in Double-Barrier Structures;physica status solidi (b);1995-02-01
5. Dynamics of Double-Barrier Resonant Tunnelling Structures;physica status solidi (b);1994-09-01
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