Ge-vacancy pair in Ge-doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2940729
Reference25 articles.
1. Vacancy–oxygen complex in Si1−xGex crystals
2. Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
3. Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
4. First-principles calculation of the interaction between nitrogen atoms and vacancies in silicon
5. Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes?
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