Interaction transfer of silicon atoms forming Co silicide for Co/ 3×3R30°-Ag/Si(111) and related magnetic properties
Author:
Affiliation:
1. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
Funder
Ministry of Science and Technology Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4917062
Reference32 articles.
1. Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors
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4. Influence of catalyst layer thickness on the growth of nickel silicide nanowires and its application for Li-ion batteries
5. Nucleation of cobalt silicide islands on Si(111)-7 × 7
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1. Silicide formation at lower temperatures for cobalt and nickel on √3 x √3R30°-Ag/Si(111);2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers);2023-05
2. The straightforward fabrication of thin silicide layers at low temperatures by employing the molecular-incident reaction effect;Results in Physics;2022-08
3. Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface;Scientific Reports;2019-06-20
4. The mechanism for the stabilization and surfactant properties of epitaxial silicene;Nanoscale;2018
5. Enhancing the magnetic anisotropy energy by tuning the contact areas of Ag and Ni at the Ag/Ni interface;Physical Chemistry Chemical Physics;2018
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