Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application

Author:

Kumar Pradeep1ORCID,Kaur Davinder1ORCID

Affiliation:

1. Functional Nanomaterials Research Laboratory (FNRL), Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India

Abstract

Multifunctional flexible electronics is the ongoing demand for fabricating wearable data storage and communication devices. The magnetoelectric (ME) heterostructure consisting of piezoelectric (AlN) and ferromagnetic magnetic shape memory alloy [FSMA (Ni–Mn–In)] was fabricated over stainless steel (SS) substrate for resistive random access memory application. The Cu/AlN/FSMA/SS metal–insulator–metal based memory cell displays bipolar resistive switching (RS) behavior. The formation of Cu metallic filament at a particular SET voltage leads the memory cell in a low resistance state (LRS) from its pristine high resistance state (HRS). The LRS and HRS are explained well by Ohmic and space charge limited conduction mechanisms, respectively. The fabricated memory cell displays excellent endurance and data retention capability with a high OFF/ON ratio of ∼1.2 × 103. Furthermore, the multifunctionality of the ME heterostructure-based RAM was investigated by tuning the SET voltage with ambiance temperature and external magnetic field remotely. A significant change in the SET voltage could be ascribed to the temperature and magnetic field-induced strain transferred to the AlN piezoelectric layer from the magnetostrictive FSMA (Ni–Mn–In) bottom electrode. The residual Lorentz force explains the remotely tuned LRS and HRS in the transverse magnetic field for multi-bit data storage applications. Moreover, the RS characteristics remain stable even after 800 bending cycles as well as with bending angle (0°–180°). Hence, the present ME heterostructure integrated with flexible SS substrate can be a better choice for highly flexible, low-cost, and multifunctional futuristic RAM applications.

Funder

Nano Mission Council

Defence Research and Development Organisation

Science and Engineering Research Board

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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