Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120219
Reference23 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Emerging gallium nitride based devices
3. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
4. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
5. Growth of GaN by ECR-assisted MBE
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2. Precession electron diffraction-assisted crystal phase mapping of metastable c-GaN films grown on (001) GaAs;Microscopy Research and Technique;2014-08-14
3. Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths;Semiconductor Science and Technology;2007-08-14
4. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux;Journal of Physics: Conference Series;2006-02-22
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