Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101818
Reference9 articles.
1. Continuously-tunable single-frequency semiconductor lasers
2. Tunable DBR laser with wide tuning range
3. Electric field dependence of optical absorption near the band gap of quantum-well structures
4. 100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio
5. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
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1. Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55 μm;Thin Solid Films;2015-04
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3. Disordering of InGaAs/GaAs multiquantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration;SPIE Proceedings;2005-03-25
4. Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes;Applied Optics;2003-05-20
5. Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance;Materials and Devices for Optical and Wireless Communications;2002-08-30
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