Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99881
Reference11 articles.
1. Detailed investigation of doping in hydrogenated amorphous silicon and germanium
2. Doping of amorphous silicon by alkali-ion implantations
3. Doping of evaporated amorphous silicon films
4. Transport in lithium-doped amorphous siliconf
5. Interstitial doping of amorphous silicon
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1. Permeation, Solubility, Diffusion and Segregation of Lithium in Amorphous Silicon Layers;Chemistry of Materials;2018-04-24
2. Structure and physical properties for a new layered pnictide-oxide: BaTi2As2O;Journal of Physics: Condensed Matter;2010-02-02
3. Universal dopant and defect equilibration kinetics inn-typea-Si:H;Physical Review B;1989-12-15
4. Interstitial Li doping ofa‐Si:H;Journal of Applied Physics;1989-03-15
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