Effect of stacking faults on the photoluminescence spectrum of zincblende GaN-Reference-Cited by-同舟云学术

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Published:2018-05-14 Issue:18 Volume:123 Page:185705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Church S. A.¹^ORCID,Hammersley S.¹^ORCID,Mitchell P. W.¹^ORCID,Kappers M. J.²,Lee L. Y.²^ORCID,Massabuau F.²,Sahonta S. L.²^ORCID,Frentrup M.²,Shaw L. J.³,Wallis D. J.²⁴,Humphreys C. J.²^ORCID,Oliver R. A.²^ORCID,Binks D. J.¹^ORCID,Dawson P.¹^ORCID

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

3. Anvil Semiconductors Ltd., Future Business Centre, King's Hedges Road, Cambridge CB4 2HY, United Kingdom

4. Centre for High Frequency Engineering, University of Cardiff, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom

Funder

Innovate UK

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026267

Reference44 articles.

1. Solid-State Lighting R&D Plan - 2015

2. Optimal ways of colour mixing for high-quality white-light LED sources

3. Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

4. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

5. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

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