Critical dimension and pattern size enhancement using pre-strained lithography-Reference-Cited by-同舟云学术

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Critical dimension and pattern size enhancement using pre-strained lithography

Published:2014-10-13 Issue:15 Volume:105 Page:154103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hong Jian-Wei¹,Yang Chung-Yuan²,Lo Cheng-Yao¹²

Affiliation:

1. Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan

2. Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan

Funder

National Science Council Taiwan (NSC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898572

Reference28 articles.

1. The mask error factor in optical lithography

2. Improving resolution in photolithography with a phase-shifting mask

3. Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars

4. Projection reduction exposure with variable axis immersion lenses: Next generation lithography

5. Pushing the limits of lithography

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