Indium tin oxide/gallium arsenide solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336255
Reference6 articles.
1. High conversion efficiency and high radiation resistance InP homojunction solar cells
2. Room‐temperature annealing of radiation‐induced defects in InP solar cells
3. High efficiency indium tin oxide/indium phosphide solar cells
4. Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions
5. Evaluation of ITO/GaAs solar cells
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1. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction;Applied Physics Letters;2013-12-16
2. Structural and opto-electrical properties of the tin-doped indium oxide thin films fabricated by the wet chemical method with different indium starting materials;Thin Solid Films;2011-04
3. Damage in a GaAs Surface Caused by RF-Sputter Deposition of $\bf SiO_{2}$;Japanese Journal of Applied Physics;1995-09-15
4. Improvements in the electrical properties of indium oxide/p-InP and indium oxide/n-GaAs heterostructures formed at low reaction temperatures by rapid thermal annealing;Semiconductor Science and Technology;1995-08-01
5. Thermal stability of rapidly annealed indium tin oxide/n-GaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
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