Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3507289
Reference25 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Prospects for LED lighting
3. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
4. Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique
5. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures
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1. Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film;Journal of Vacuum Science & Technology B;2023-08-31
2. Polarization anisotropy and valence band ordering in semipolar (112¯2) AlInN/GaN heterostructures;Physical Review B;2023-01-05
3. Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells;Japanese Journal of Applied Physics;2022-05-23
4. Strain Effects in Wurtzite Boron Nitride: Elastic Constants, Internal Strain, and Deformation Potentials from Hybrid Functional Density Functional Theory;physica status solidi (RRL) – Rapid Research Letters;2022-04
5. Wurtzite quantum well structures under high pressure;Journal of Applied Physics;2020-08-07
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