GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass-Reference-Cited by-同舟云学术

GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass

Published:2015-09-21 Issue:12 Volume:107 Page:122107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hu Yonghong¹²,Zhang Shengli¹,Sun Shaofa²,Xie Meiqiu¹,Cai Bo¹^ORCID,Zeng Haibo¹

Affiliation:

1. Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

2. School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931459

Reference52 articles.

1. Electronic transport in two-dimensional graphene

2. Structures and Chemical Properties of Silicene: Unlike Graphene

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Hydrogenated arsenenes as planar magnet and Dirac material

5. Tinene: a two-dimensional Dirac material with a 72 meV band gap

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